Si Wafer
4" (100mm) Silicon Wafer Specifcations
SOI Wafer
Sapphire Wafer
III-V Wafer
Material Properties
Type/Dopant
P, Boron N, Phosphorous N, Antimony N, Arsenic
Other Substrate
Carbon Content
< 0.5 ppmA Custom tolerances per customer’s specification
Resistivity ranges- P, Boron- N, Phosphorous- N, Antimony- N, Arsenic
0.001 – 50 ohm cm 0.1 – 40 ohm cm 0.005 – 0.025 ohm cm < 0.005 ohm cm
Mechanical Properties
Parameter
Prime
Monitor / Test A
Test
Diameter
100 ± 0.2 mm
100 ± 0.2 mm
100 ± 0.5 mm
Thickness
525 ± 20 µm (standard)
525 ± 25 µm (standard) 381 ± 25 µm 625 ± 25 µm 700 ± 25 µm 800 ± 25 µm 1000 ± 25 µm 1500 ± 25 µm
525 ± 50 µm (standard)
TTV
< 5 µm
< 10 µm
< 15 µm
Bow
< 30 µm
< 30 µm
< 40 µm
Wrap
< 30 µm
< 30 µm
< 40 µm
Edge Rounding
SEMI-STD
Marking
SEMI-STD Flats, Primary SEMI-Flat only
Surface Quality
Parameter
Prime
Monitor / Test A
Test
Front Side Criteria
Surface condition
Chemical Mechanical Polished
Chemical Mechanical Polished
Chemical Mechanical Polished
Surface Roughness
< 2Å
< 2Å
< 2Å
Contamination,Particles @ >0.3 µm
= 20
= 20
= 20
Haze, Pits, Orange peel
None
None
None
Saw Marks, striations
None
None
None
Back Side Criteria
None
None
None
Caustic etched
Cracks, crowsfeet, saw marks,stains
Surface condition
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