Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.
High Strength, High Rigidity, High Anti-Abrasion, High Anti-Heat, High AntiCorrosion Characteristics, and High Anti-Plasma Characteristics
Because of these characteristics, Single Crystal Sapphire is widely used for precision mechanical parts.
Stable Dielectric Constant, Very Low Dielectric Loss, Good Electrical Insulation
Single Crystal Sapphire is used as a material for substrates in super-high frequency regions. It is also used as an insulation material and microwave window. Single Crystal Sapphire has become indispensable in the Electronics Industries.
Excellent Light Transmission
Single Crystal Sapphire is used for various kinds of vacuum equipment, windows in reaction furnace, scanner windows and caps for optical communication due to its excellent mechanical characteristics and heat resistance.
Good Thermal Conductivity and High Heat Resistance
Excellent thermal conductivity at low temperatures allows Single Crystal Sapphire as a transparent material to be used in many diverse fields requiring thermal conduction and heat radiation.
+Z / -Z
Single Side Polished
Double Side Polished
Aluminum nitride (AlN) substrates are now available in a range of sizes from 6mm x 6mm suitable for research or 2-inch diameter for production. Substrates are available with a-face or c-face orientation (2-inch substrates are limited to c-face presently) and other orientations are available on a special order basis.
Substrates are epi ready on the front surface with a fine ground back surface.
Interested parties should contact us.